Abstract
We report on millimeter wave measurements of an In0.53Ga0.47As/In0.52Al0.48As multiquantum well fabricated by gas source molecular beam epitaxy. Transmission experiments with the millimeter waves (16-110 GHz) were carried out as a function of the magnetic field up to 10 T at temperatures down to 0.6 K. The quantum oscillations corrresponding to the Shubnikov-de Haas effect are observed in the amplitude and phase of the transmitting waves. The effective mass can be estimated as 0.058m0 for the 1st-subband electron. In spite of a small Fermi energy of 27 meV for the 1st subband, the enhancement of an effective mass is 30% over the bulk band-edge mass of 0.041m0. The large difference originates from the resonant polaron coupling due to a fundamental GaAs-like LO-phonon in addition to the band nonparabolicity of the In0.53Ga0.47As well.
Original language | English |
---|---|
Pages (from-to) | L1287-1290 |
Journal | Japanese Journal of Applied Physics |
Volume | 36 |
Issue number | 10 PART A |
DOIs | |
Publication status | Published - 1997 Oct 1 |
Keywords
- Band nonparabolicity
- InGaAs/InAlAs
- Millimeter wave
- Multiquantum well
- Polaron effect
- Quantum oscillation
- Shubnikov-de Haas effect