Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

K. Inomata; T. Nozaki; N. Tezuka; S. Sugimoto

doi:10.1063/1.1490149

Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

K. Inomata, T. Nozaki, N. Tezuka, S. Sugimoto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Synthetic antiferromagnets (SyAF) made of Co₉₀Fe ₁₀(t₁)/Ru(d)/Co₉₀Fe₁₀(t ₂) trilayers and spin-valve type multilayers using a SyAF free layer were deposited on a buffer layer of Cu(2.5 nm)/Ru(10 nm) on a SiO₂/Si substrate by using an ultrahigh vacuum sputtering system and a metal mask. The magnetization switching field of the SyAF in both trilayers and multilayers was independent of the Ru thickness, suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to t₁/Δt (Δt=t ₁-t₂), which is in good agreement with the model of coherent rotation with perfect antiparallel alignment during magnetization reversal of the SyAF. Giant magnetoresistance of the multilayers exhibited two types of curves depending on t₁>t₂ or t ₁<t₂.

Original language	English
Pages (from-to)	310-312
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	2
DOIs	https://doi.org/10.1063/1.1490149
Publication status	Published - 2002 Jul 8

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1490149

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@article{b7a6b2866a04442d942ad459329d67d0,

title = "Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers",

abstract = "Synthetic antiferromagnets (SyAF) made of Co90Fe 10(t1)/Ru(d)/Co90Fe10(t 2) trilayers and spin-valve type multilayers using a SyAF free layer were deposited on a buffer layer of Cu(2.5 nm)/Ru(10 nm) on a SiO2/Si substrate by using an ultrahigh vacuum sputtering system and a metal mask. The magnetization switching field of the SyAF in both trilayers and multilayers was independent of the Ru thickness, suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to t1/Δt (Δt=t 1-t2), which is in good agreement with the model of coherent rotation with perfect antiparallel alignment during magnetization reversal of the SyAF. Giant magnetoresistance of the multilayers exhibited two types of curves depending on t1>t2 or t 12.",

author = "K. Inomata and T. Nozaki and N. Tezuka and S. Sugimoto",

year = "2002",

month = jul,

day = "8",

doi = "10.1063/1.1490149",

language = "English",

volume = "81",

pages = "310--312",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

AU - Inomata, K.

AU - Nozaki, T.

AU - Tezuka, N.

AU - Sugimoto, S.

PY - 2002/7/8

Y1 - 2002/7/8

N2 - Synthetic antiferromagnets (SyAF) made of Co90Fe 10(t1)/Ru(d)/Co90Fe10(t 2) trilayers and spin-valve type multilayers using a SyAF free layer were deposited on a buffer layer of Cu(2.5 nm)/Ru(10 nm) on a SiO2/Si substrate by using an ultrahigh vacuum sputtering system and a metal mask. The magnetization switching field of the SyAF in both trilayers and multilayers was independent of the Ru thickness, suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to t1/Δt (Δt=t 1-t2), which is in good agreement with the model of coherent rotation with perfect antiparallel alignment during magnetization reversal of the SyAF. Giant magnetoresistance of the multilayers exhibited two types of curves depending on t1>t2 or t 12.

AB - Synthetic antiferromagnets (SyAF) made of Co90Fe 10(t1)/Ru(d)/Co90Fe10(t 2) trilayers and spin-valve type multilayers using a SyAF free layer were deposited on a buffer layer of Cu(2.5 nm)/Ru(10 nm) on a SiO2/Si substrate by using an ultrahigh vacuum sputtering system and a metal mask. The magnetization switching field of the SyAF in both trilayers and multilayers was independent of the Ru thickness, suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to t1/Δt (Δt=t 1-t2), which is in good agreement with the model of coherent rotation with perfect antiparallel alignment during magnetization reversal of the SyAF. Giant magnetoresistance of the multilayers exhibited two types of curves depending on t1>t2 or t 12.

UR - http://www.scopus.com/inward/record.url?scp=79956041641&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956041641&partnerID=8YFLogxK

U2 - 10.1063/1.1490149

DO - 10.1063/1.1490149

M3 - Article

AN - SCOPUS:79956041641

SN - 0003-6951

VL - 81

SP - 310

EP - 312

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers

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