GMR spin-valve type multilayers using a synthetic antiferromagnets (SyAF) free layers consisting of Co90Fe10 (t1)/Ru(d) / Co90Fe10 (t2) were deposited on a SiO2/Si substrate by using an ultrahigh vacuum magnetron sputtering system and a metal mask. Giant magnetoresistance curves of these multilyers exhibited two types of curves (normal and inverse like type), depending on the magnitude relation of t1 and t2. The magnetization switching field of SyAF free layers was independent of the Ru thickness (d), suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to (t1 + t2)/Δt, which is in good agreement with the coherent rotation model with perfect antiparallel alignment during magnetization reversal of the SyAF.
|Number of pages||5|
|Journal||Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals|
|Publication status||Published - 2002 Nov|
- Giant magnetoresistance
- Magnetic random access memory
- Synthetic antiferromagnets