Magnetic switching properties of GMR spin-valves using SyAF free layers

Takayuki Nozaki; Shinya Abe; Nobuki Tezuka; Koichiro Inomata; Satoshi Sugimoto

doi:10.2320/jinstmet1952.66.11_1078

Magnetic switching properties of GMR spin-valves using SyAF free layers

Takayuki Nozaki, Shinya Abe, Nobuki Tezuka, Koichiro Inomata, Satoshi Sugimoto

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GMR spin-valve type multilayers using a synthetic antiferromagnets (SyAF) free layers consisting of Co₉₀Fe₁₀ (t₁)/Ru(d) / Co₉₀Fe₁₀ (t₂) were deposited on a SiO₂/Si substrate by using an ultrahigh vacuum magnetron sputtering system and a metal mask. Giant magnetoresistance curves of these multilyers exhibited two types of curves (normal and inverse like type), depending on the magnitude relation of t₁ and t₂. The magnetization switching field of SyAF free layers was independent of the Ru thickness (d), suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to (t₁ + t₂)/Δt, which is in good agreement with the coherent rotation model with perfect antiparallel alignment during magnetization reversal of the SyAF.

Original language	English
Pages (from-to)	1078-1082
Number of pages	5
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	66
Issue number	11
DOIs	https://doi.org/10.2320/jinstmet1952.66.11_1078
Publication status	Published - 2002 Nov

Keywords

Giant magnetoresistance
Magnetic random access memory
Synthetic antiferromagnets

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10.2320/jinstmet1952.66.11_1078

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title = "Magnetic switching properties of GMR spin-valves using SyAF free layers",

abstract = "GMR spin-valve type multilayers using a synthetic antiferromagnets (SyAF) free layers consisting of Co90Fe10 (t1)/Ru(d) / Co90Fe10 (t2) were deposited on a SiO2/Si substrate by using an ultrahigh vacuum magnetron sputtering system and a metal mask. Giant magnetoresistance curves of these multilyers exhibited two types of curves (normal and inverse like type), depending on the magnitude relation of t1 and t2. The magnetization switching field of SyAF free layers was independent of the Ru thickness (d), suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to (t1 + t2)/Δt, which is in good agreement with the coherent rotation model with perfect antiparallel alignment during magnetization reversal of the SyAF.",

keywords = "Giant magnetoresistance, Magnetic random access memory, Synthetic antiferromagnets",

author = "Takayuki Nozaki and Shinya Abe and Nobuki Tezuka and Koichiro Inomata and Satoshi Sugimoto",

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T1 - Magnetic switching properties of GMR spin-valves using SyAF free layers

AU - Nozaki, Takayuki

AU - Abe, Shinya

AU - Tezuka, Nobuki

AU - Inomata, Koichiro

AU - Sugimoto, Satoshi

PY - 2002/11

Y1 - 2002/11

N2 - GMR spin-valve type multilayers using a synthetic antiferromagnets (SyAF) free layers consisting of Co90Fe10 (t1)/Ru(d) / Co90Fe10 (t2) were deposited on a SiO2/Si substrate by using an ultrahigh vacuum magnetron sputtering system and a metal mask. Giant magnetoresistance curves of these multilyers exhibited two types of curves (normal and inverse like type), depending on the magnitude relation of t1 and t2. The magnetization switching field of SyAF free layers was independent of the Ru thickness (d), suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to (t1 + t2)/Δt, which is in good agreement with the coherent rotation model with perfect antiparallel alignment during magnetization reversal of the SyAF.

AB - GMR spin-valve type multilayers using a synthetic antiferromagnets (SyAF) free layers consisting of Co90Fe10 (t1)/Ru(d) / Co90Fe10 (t2) were deposited on a SiO2/Si substrate by using an ultrahigh vacuum magnetron sputtering system and a metal mask. Giant magnetoresistance curves of these multilyers exhibited two types of curves (normal and inverse like type), depending on the magnitude relation of t1 and t2. The magnetization switching field of SyAF free layers was independent of the Ru thickness (d), suggesting that the switching field is independent of the magnitude of the antiferromagnetic interlayer exchange coupling, and was proportional to (t1 + t2)/Δt, which is in good agreement with the coherent rotation model with perfect antiparallel alignment during magnetization reversal of the SyAF.

KW - Giant magnetoresistance

KW - Magnetic random access memory

KW - Synthetic antiferromagnets

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ER -

Magnetic switching properties of GMR spin-valves using SyAF free layers

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Keywords

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