Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

T. Nozaki; Y. Jiang; H. Sukegawa; N. Tezuka; A. Hirohata; K. Inomata; S. Sugimoto

doi:10.1063/1.1669053

Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

T. Nozaki, Y. Jiang, H. Sukegawa, N. Tezuka, A. Hirohata, K. Inomata, S. Sugimoto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The magnetic switching properties of magnetic tunnel junctions (MTJ) using a synthetic ferrimagnet (SyF) free layer were studied. The free layers were deposited on a thermally oxidized Si substrate by an ultrahigh vacuum sputtering system. The tunneling magnetoresistance (TMR) curves were measured using a dc four probe method. It was observed that the SyF free layer showed a size independent switching field for all element widths from 0.25 to 16 μm. Large TMR ratio up to 40% was exhibited by the MTJs after annealing at 250 °C.

Original language	English
Pages (from-to)	3745-3748
Number of pages	4
Journal	Journal of Applied Physics
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.1669053
Publication status	Published - 2004 Apr 1

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abstract = "The magnetic switching properties of magnetic tunnel junctions (MTJ) using a synthetic ferrimagnet (SyF) free layer were studied. The free layers were deposited on a thermally oxidized Si substrate by an ultrahigh vacuum sputtering system. The tunneling magnetoresistance (TMR) curves were measured using a dc four probe method. It was observed that the SyF free layer showed a size independent switching field for all element widths from 0.25 to 16 μm. Large TMR ratio up to 40% was exhibited by the MTJs after annealing at 250 °C.",

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AU - Nozaki, T.

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AU - Sukegawa, H.

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AU - Hirohata, A.

AU - Inomata, K.

AU - Sugimoto, S.

PY - 2004/4/1

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AB - The magnetic switching properties of magnetic tunnel junctions (MTJ) using a synthetic ferrimagnet (SyF) free layer were studied. The free layers were deposited on a thermally oxidized Si substrate by an ultrahigh vacuum sputtering system. The tunneling magnetoresistance (TMR) curves were measured using a dc four probe method. It was observed that the SyF free layer showed a size independent switching field for all element widths from 0.25 to 16 μm. Large TMR ratio up to 40% was exhibited by the MTJs after annealing at 250 °C.

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Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

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