TY - GEN
T1 - Magnetic tunnel junction for nonvolatile CMOS logic
AU - Ohno, Hideo
AU - Endoh, Tetsuo
AU - Hanyu, Takahiro
AU - Kasai, Naoki
AU - Ikeda, Shoji
PY - 2010
Y1 - 2010
N2 - Magnetic tunnel junction (MTJ) device, a nonvolatile spintronic device, is capable of fast-read/write with high endurance together with back-end-of-the-line (BEOL) compatibility, offering a possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also low-power high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing MTJs with CMOS circuits are discussed and the current status of the MTJ technology is presented along with its prospect and remaining challenges.
AB - Magnetic tunnel junction (MTJ) device, a nonvolatile spintronic device, is capable of fast-read/write with high endurance together with back-end-of-the-line (BEOL) compatibility, offering a possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also low-power high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing MTJs with CMOS circuits are discussed and the current status of the MTJ technology is presented along with its prospect and remaining challenges.
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U2 - 10.1109/IEDM.2010.5703329
DO - 10.1109/IEDM.2010.5703329
M3 - Conference contribution
AN - SCOPUS:79951826370
SN - 9781424474196
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 9.4.1-9.4.4
BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010
T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010
Y2 - 6 December 2010 through 8 December 2010
ER -