@article{0d83b4cc5c6c472db9579aa3bea626da,
title = "Magnetic tunnel junctions using B2-ordered Co2 MnAl Heusler alloy epitaxial electrode",
abstract = "Magnetic tunnel junctions were fabricated with epitaxially grown Co2 MnAl bottom electrodes combined with an Al-O tunnel barrier using a magnetron sputtering system. The epitaxial Co2 MnAl electrode had very low surface roughness of 0.2 nm and a highly ordered B2 structure. Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial- Co2 MnAlAl-OCoFeIrMn exhibited large tunnel magnetoresistance (TMR) ratios of 65% at room temperature and 83% at 10 K. The TMR ratios were larger than those of a MTJ with a Co2 MnAl polycrystalline electrode.",
author = "Y. Sakuraba and J. Nakata and M. Oogane and Y. Ando and H. Kato and A. Sakuma and T. Miyazaki and H. Kubota",
note = "Funding Information: The authors are grateful to Dr. S. Yuasa of the National Institute of Advanced Industrial Science and Technology (AIST) for helpful discussion related to this study. This study was supported by the IT-Program of the Research Revolution 2002 (RR2002) “Development of Universal Low-Power Spin Memory” and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, CREST of Japan Science and Technology (JST), the NEDO Grant Program, and JSPS Research Fellowships for Young Scientists.",
year = "2006",
doi = "10.1063/1.2162867",
language = "English",
volume = "88",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "2",
}