Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy

Kazuya Z. Suzuki; Shojiro Kimura; Hitoshi Kubota; Shigemi Mizukami

doi:10.1021/acsami.8b15606

Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy

Kazuya Z. Suzuki, Shojiro Kimura, Hitoshi Kubota, Shigemi Mizukami

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance. Moreover, the perpendicular magnetic anisotropy for the nanolayer can be reduced by applying an electric voltage. These findings will provide new insight into a creation of new nanolayer magnets.

Original language	English
Pages (from-to)	43305-43310
Number of pages	6
Journal	ACS applied materials & interfaces
Volume	10
Issue number	50
DOIs	https://doi.org/10.1021/acsami.8b15606
Publication status	Published - 2018 Dec 19

Keywords

ferrimagnets
magnetic tunnel junction
perpendicular anisotropy
tunnel magnetoresistance
voltage control

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10.1021/acsami.8b15606

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title = "Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy",

abstract = "A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance. Moreover, the perpendicular magnetic anisotropy for the nanolayer can be reduced by applying an electric voltage. These findings will provide new insight into a creation of new nanolayer magnets.",

keywords = "ferrimagnets, magnetic tunnel junction, perpendicular anisotropy, tunnel magnetoresistance, voltage control",

author = "Suzuki, {Kazuya Z.} and Shojiro Kimura and Hitoshi Kubota and Shigemi Mizukami",

note = "Funding Information: We thank Y. Kondo and Y. Kiguchi for their technical support in the microfabrication and MR measurements and Y. Miura, J. Okabayashi, and T. Miyazaki for fruitful discussions. This work was partially supported by the ImPACT program, KAKENHI (17K14103), the Asahi Glass Foundation, and the Sasakawa Foundation. Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

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T1 - Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy

AU - Suzuki, Kazuya Z.

AU - Kimura, Shojiro

AU - Kubota, Hitoshi

AU - Mizukami, Shigemi

N1 - Funding Information: We thank Y. Kondo and Y. Kiguchi for their technical support in the microfabrication and MR measurements and Y. Miura, J. Okabayashi, and T. Miyazaki for fruitful discussions. This work was partially supported by the ImPACT program, KAKENHI (17K14103), the Asahi Glass Foundation, and the Sasakawa Foundation. Publisher Copyright: Copyright © 2018 American Chemical Society.

PY - 2018/12/19

Y1 - 2018/12/19

N2 - A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance. Moreover, the perpendicular magnetic anisotropy for the nanolayer can be reduced by applying an electric voltage. These findings will provide new insight into a creation of new nanolayer magnets.

AB - A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance. Moreover, the perpendicular magnetic anisotropy for the nanolayer can be reduced by applying an electric voltage. These findings will provide new insight into a creation of new nanolayer magnets.

KW - ferrimagnets

KW - magnetic tunnel junction

KW - perpendicular anisotropy

KW - tunnel magnetoresistance

KW - voltage control

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JO - ACS applied materials & interfaces

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ER -

Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy

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Keywords

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