Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

H. Honjo; S. Fukami; R. Nebashi; N. Ishiwata; S. Miura; N. Sakimura; T. Sugibayashi; N. Kasai; H. Ohno

doi:10.1063/1.3675268

Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have developed a shape varying magnetic tunneling junction (SVM) with a Fe/NiFeB free layer for use in magnetic logic circuits. Inserting the thin Fe film between an NiFeB free layer and MgO tunneling barrier improved the magnetoresistance (MR) ratio: it increased up to 130, as the thickness of the Fe film increased. In addition, the switching current distribution of the SVM was reduced to 8. By using NiFeB as a free layer, the roughness under the MgO was reduced and the crystallization of the MgO was enhanced. This led to both the high MR ratio and the low switching current distribution. Our developed Fe (0.4 nm)/NiFeB free layer satisfies the requirement of the MTJ's characteristics that the magnetic logic circuits operate with a high bit yield.

Original language	English
Article number	07C709
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3675268
Publication status	Published - 2012 Apr 1

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title = "Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits",

abstract = "We have developed a shape varying magnetic tunneling junction (SVM) with a Fe/NiFeB free layer for use in magnetic logic circuits. Inserting the thin Fe film between an NiFeB free layer and MgO tunneling barrier improved the magnetoresistance (MR) ratio: it increased up to 130, as the thickness of the Fe film increased. In addition, the switching current distribution of the SVM was reduced to 8. By using NiFeB as a free layer, the roughness under the MgO was reduced and the crystallization of the MgO was enhanced. This led to both the high MR ratio and the low switching current distribution. Our developed Fe (0.4 nm)/NiFeB free layer satisfies the requirement of the MTJ's characteristics that the magnetic logic circuits operate with a high bit yield.",

author = "H. Honjo and S. Fukami and R. Nebashi and N. Ishiwata and S. Miura and N. Sakimura and T. Sugibayashi and N. Kasai and H. Ohno",

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AU - Honjo, H.

AU - Fukami, S.

AU - Nebashi, R.

AU - Ishiwata, N.

AU - Miura, S.

AU - Sakimura, N.

AU - Sugibayashi, T.

AU - Kasai, N.

AU - Ohno, H.

N1 - Funding Information: This research is funded by the Japan Society for the Promotion of Science (JSPS) through The “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program),” initiated by the Council for Science and Technology Policy (CSTP).

PY - 2012/4/1

Y1 - 2012/4/1

N2 - We have developed a shape varying magnetic tunneling junction (SVM) with a Fe/NiFeB free layer for use in magnetic logic circuits. Inserting the thin Fe film between an NiFeB free layer and MgO tunneling barrier improved the magnetoresistance (MR) ratio: it increased up to 130, as the thickness of the Fe film increased. In addition, the switching current distribution of the SVM was reduced to 8. By using NiFeB as a free layer, the roughness under the MgO was reduced and the crystallization of the MgO was enhanced. This led to both the high MR ratio and the low switching current distribution. Our developed Fe (0.4 nm)/NiFeB free layer satisfies the requirement of the MTJ's characteristics that the magnetic logic circuits operate with a high bit yield.

AB - We have developed a shape varying magnetic tunneling junction (SVM) with a Fe/NiFeB free layer for use in magnetic logic circuits. Inserting the thin Fe film between an NiFeB free layer and MgO tunneling barrier improved the magnetoresistance (MR) ratio: it increased up to 130, as the thickness of the Fe film increased. In addition, the switching current distribution of the SVM was reduced to 8. By using NiFeB as a free layer, the roughness under the MgO was reduced and the crystallization of the MgO was enhanced. This led to both the high MR ratio and the low switching current distribution. Our developed Fe (0.4 nm)/NiFeB free layer satisfies the requirement of the MTJ's characteristics that the magnetic logic circuits operate with a high bit yield.

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Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

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