Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Ryoichi Nakatani; Tetsuo Yoshida; Yasushi Endo; Yoshio Kawamura; Masahiko Yamamoto; Takashi Takenaga; Sunao Aya; Takeharu Kuroiwa; Sadeh Beysen; Hiroshi Kobayashi

doi:10.1063/1.1667433

Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Ryoichi Nakatani, Tetsuo Yoshida, Yasushi Endo, Yoshio Kawamura, Masahiko Yamamoto, Takashi Takenaga, Sunao Aya, Takeharu Kuroiwa, Sadeh Beysen, Hiroshi Kobayashi

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The magnetic states of the Ni-Fe asymmetric ring dots with partially planed outer sides were analyzed, using magnetic force microscopy and magneto-optical Kerr effect (MOKE) magnetometry. The shape of the magnetic states were analyzed by the scanning electron microscopy. The asymmetric ring dots were fabricate using electron beam lithography, DC sputtering and ion milling. The in-plane magnetic fields were found to control the magnetization chirality, either clockwise or counterclockwise, of vortical magnetizations of the assymmetric ring dots.

Original language	English
Pages (from-to)	6714-6716
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1667433
Publication status	Published - 2004 Jun 1

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10.1063/1.1667433

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abstract = "The magnetic states of the Ni-Fe asymmetric ring dots with partially planed outer sides were analyzed, using magnetic force microscopy and magneto-optical Kerr effect (MOKE) magnetometry. The shape of the magnetic states were analyzed by the scanning electron microscopy. The asymmetric ring dots were fabricate using electron beam lithography, DC sputtering and ion milling. The in-plane magnetic fields were found to control the magnetization chirality, either clockwise or counterclockwise, of vortical magnetizations of the assymmetric ring dots.",

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T1 - Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

AU - Nakatani, Ryoichi

AU - Yoshida, Tetsuo

AU - Endo, Yasushi

AU - Kawamura, Yoshio

AU - Yamamoto, Masahiko

AU - Takenaga, Takashi

AU - Aya, Sunao

AU - Kuroiwa, Takeharu

AU - Beysen, Sadeh

AU - Kobayashi, Hiroshi

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The magnetic states of the Ni-Fe asymmetric ring dots with partially planed outer sides were analyzed, using magnetic force microscopy and magneto-optical Kerr effect (MOKE) magnetometry. The shape of the magnetic states were analyzed by the scanning electron microscopy. The asymmetric ring dots were fabricate using electron beam lithography, DC sputtering and ion milling. The in-plane magnetic fields were found to control the magnetization chirality, either clockwise or counterclockwise, of vortical magnetizations of the assymmetric ring dots.

AB - The magnetic states of the Ni-Fe asymmetric ring dots with partially planed outer sides were analyzed, using magnetic force microscopy and magneto-optical Kerr effect (MOKE) magnetometry. The shape of the magnetic states were analyzed by the scanning electron microscopy. The asymmetric ring dots were fabricate using electron beam lithography, DC sputtering and ion milling. The in-plane magnetic fields were found to control the magnetization chirality, either clockwise or counterclockwise, of vortical magnetizations of the assymmetric ring dots.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

ER -

Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

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