Magneto-optical study of n -type modulation-doped ZnO/ Mgx Zn1-x O single quantum well structures

T. Makino; Y. Furuta; Y. Segawa; A. Tsukazaki; A. Ohtomo; Y. Hirayama; R. Shen; S. Takeyama; Y. Takagi; M. Kawasaki

doi:10.1103/PhysRevB.80.155333

Magneto-optical study of n -type modulation-doped ZnO/ Mgx Zn1-x O single quantum well structures

T. Makino, Y. Furuta, Y. Segawa, A. Tsukazaki, A. Ohtomo, Y. Hirayama, R. Shen, S. Takeyama, Y. Takagi, M. Kawasaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO(5 nm)/MgZnO single quantum wells (SQWs) by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence (PL) blueshift due to the screening of internal polarization field by the injected electrons. Circular polarization in PL was enhanced by a magnetic field up to 50 T with a Faraday configuration. The observed Zeeman splitting and the degree of circular polarization in the magnetic field revealed that the PL originates from the negatively charged excitons X-.

Original language	English
Article number	155333
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.80.155333
Publication status	Published - 2009 Oct 30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.80.155333

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abstract = "We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO(5 nm)/MgZnO single quantum wells (SQWs) by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence (PL) blueshift due to the screening of internal polarization field by the injected electrons. Circular polarization in PL was enhanced by a magnetic field up to 50 T with a Faraday configuration. The observed Zeeman splitting and the degree of circular polarization in the magnetic field revealed that the PL originates from the negatively charged excitons X-.",

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T1 - Magneto-optical study of n -type modulation-doped ZnO/ Mgx Zn1-x O single quantum well structures

AU - Makino, T.

AU - Furuta, Y.

AU - Segawa, Y.

AU - Tsukazaki, A.

AU - Ohtomo, A.

AU - Hirayama, Y.

AU - Shen, R.

AU - Takeyama, S.

AU - Takagi, Y.

AU - Kawasaki, M.

PY - 2009/10/30

Y1 - 2009/10/30

N2 - We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO(5 nm)/MgZnO single quantum wells (SQWs) by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence (PL) blueshift due to the screening of internal polarization field by the injected electrons. Circular polarization in PL was enhanced by a magnetic field up to 50 T with a Faraday configuration. The observed Zeeman splitting and the degree of circular polarization in the magnetic field revealed that the PL originates from the negatively charged excitons X-.

AB - We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO(5 nm)/MgZnO single quantum wells (SQWs) by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence (PL) blueshift due to the screening of internal polarization field by the injected electrons. Circular polarization in PL was enhanced by a magnetic field up to 50 T with a Faraday configuration. The observed Zeeman splitting and the degree of circular polarization in the magnetic field revealed that the PL originates from the negatively charged excitons X-.

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Magneto-optical study of n -type modulation-doped ZnO/ Mgx Zn1-x O single quantum well structures

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