TY - JOUR
T1 - Magnetoelectric manipulation and enhanced operating temperature in antiferromagnetic Cr2O3 thin film
AU - Nozaki, Tomohiro
AU - Sahashi, Masashi
N1 - Funding Information:
The authors would like to thank C. Binek, P. Borisov, H. Imamura, Y. Kota, Y. Kitaoka, K. Mibu, T. Mitsui, Y. Shiratsuchi, T. Kimura, E. Kita, H. Yanagihara, T. Shibata, S. Yonemura, Y. Shiokawa, S. P. Pati, M. Al-Mahdawi, S. Ye, N. Shimomura, T. Ashida, Y. Sato, and M. Oida for fruitful discussions and technical support. This work was partly funded by the Advanced Low Carbon Technology Research and Development Program (ALCA) of the Japan Science and Technology Agency (JST), the ImPACT Program of Council for Science, Technology and Innovation (Cabinet Office, Japan Government), the Murata Science Foundation, a Grant-in-Aid for Japan Society for the Promotion of Science (JSPS) Fellows, and JSPS KAKENHI Grant Number 16H05975.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/9
Y1 - 2018/9
N2 - Electrically controllable antiferromagnets will play a prominent role in the development of future spintronics. These materials offer a way to realize innovative low-energy-consumption, high-speed, highly integrated spintronic devices for storage, memory, and logic use. The magnetoelectric manipulation of antiferromagnetic spin in Cr2O3 is one of the most promising ways to achieve such devices. Crucial problems toward device applications are 1) the establishment of high-quality Cr2O3 thin-film fabrication techniques and the demonstration of the adaptability of such films for high-performance devices, and 2) the enhancement of the operating temperature in order to ensure sufficient stability for room-temperature operations. In this review, we summarize the recent progress made in Cr2O3 thin-film research, especially focusing on the magnetoelectric manipulation of antiferromagnetic spin and material development for achieving a higher operating temperature in Cr2O3 thin films.
AB - Electrically controllable antiferromagnets will play a prominent role in the development of future spintronics. These materials offer a way to realize innovative low-energy-consumption, high-speed, highly integrated spintronic devices for storage, memory, and logic use. The magnetoelectric manipulation of antiferromagnetic spin in Cr2O3 is one of the most promising ways to achieve such devices. Crucial problems toward device applications are 1) the establishment of high-quality Cr2O3 thin-film fabrication techniques and the demonstration of the adaptability of such films for high-performance devices, and 2) the enhancement of the operating temperature in order to ensure sufficient stability for room-temperature operations. In this review, we summarize the recent progress made in Cr2O3 thin-film research, especially focusing on the magnetoelectric manipulation of antiferromagnetic spin and material development for achieving a higher operating temperature in Cr2O3 thin films.
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U2 - 10.7567/JJAP.57.0902A2
DO - 10.7567/JJAP.57.0902A2
M3 - Review article
AN - SCOPUS:85053422603
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9
M1 - 0902A2
ER -
