Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films

Kentaro Toyoki; Yu Shiratsuchi; Atsushi Kobane; Chiharu Mitsumata; Yoshinori Kotani; Tetsuya Nakamura; Ryoichi Nakatani

doi:10.1063/1.4918940

Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr₂O₃/Pt stacked films

Kentaro Toyoki, Yu Shiratsuchi, Atsushi Kobane, Chiharu Mitsumata, Yoshinori Kotani, Tetsuya Nakamura, Ryoichi Nakatani

International Center for Synchrotron Radiation Innovation Smart (SRIS)

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr₂O₃/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

Original language	English
Article number	162404
Journal	Applied Physics Letters
Volume	106
Issue number	16
DOIs	https://doi.org/10.1063/1.4918940
Publication status	Published - 2015 Apr 20

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title = "Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films",

abstract = "We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.",

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T1 - Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films

AU - Toyoki, Kentaro

AU - Shiratsuchi, Yu

AU - Kobane, Atsushi

AU - Mitsumata, Chiharu

AU - Kotani, Yoshinori

AU - Nakamura, Tetsuya

AU - Nakatani, Ryoichi

PY - 2015/4/20

Y1 - 2015/4/20

N2 - We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

AB - We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

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Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr₂O₃/Pt stacked films

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