Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films

Kentaro Toyoki, Yu Shiratsuchi, Atsushi Kobane, Chiharu Mitsumata, Yoshinori Kotani, Tetsuya Nakamura, Ryoichi Nakatani

Research output: Contribution to journalArticlepeer-review

72 Citations (Scopus)


We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

Original languageEnglish
Article number162404
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2015 Apr 20


Dive into the research topics of 'Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films'. Together they form a unique fingerprint.

Cite this