TY - JOUR
T1 - Magnetoresistance effect in Co2MnSi/semimetallic-Fe 2VAl/CoFe junctions
AU - Kubota, T.
AU - Oogane, M.
AU - Mizukami, S.
AU - Naganuma, H.
AU - Ando, Y.
AU - Miyazaki, T.
PY - 2011
Y1 - 2011
N2 - Epitaxially grown semimetallic-Fe2VAl Heusler thin films were fabricated on single crystalline MgO (100) substrate. Crystalline structure, magnetic property, and electrical transport property of the films were investigated. Non-magnetic and bulk-like resistivity was achieved in a B2-ordred Fe2VAl film annealed at 700°C. Curret-perpendicular-to-plane (CPP-) Magnetoresistance effect in Co2MnSi/Fe2VAl/CoFe junctions was also investigated. Maximum value of MR ratio was 1.1% at room temperature, which is an evidence of spin-dependent transport through Fe 2VAl Heusler alloy.
AB - Epitaxially grown semimetallic-Fe2VAl Heusler thin films were fabricated on single crystalline MgO (100) substrate. Crystalline structure, magnetic property, and electrical transport property of the films were investigated. Non-magnetic and bulk-like resistivity was achieved in a B2-ordred Fe2VAl film annealed at 700°C. Curret-perpendicular-to-plane (CPP-) Magnetoresistance effect in Co2MnSi/Fe2VAl/CoFe junctions was also investigated. Maximum value of MR ratio was 1.1% at room temperature, which is an evidence of spin-dependent transport through Fe 2VAl Heusler alloy.
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U2 - 10.1088/1742-6596/266/1/012096
DO - 10.1088/1742-6596/266/1/012096
M3 - Article
AN - SCOPUS:79952026538
SN - 1742-6588
VL - 266
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012096
ER -