Magnetoresistance effect of magnetic tunnel junction with C0 2Tio.5Mno.5Al full-heusler alloy thin film

Akihiro Sasaki; Nobuki Tezuka; Satoshi Sugimoto; Akinari Okubo; Rie Umetsu; Ryosuke Kainuma

doi:10.2320/jinstmet.73.670

Magnetoresistance effect of magnetic tunnel junction with C0 ₂Ti_o.5Mn_o.5Al full-heusler alloy thin film

Akihiro Sasaki, Nobuki Tezuka, Satoshi Sugimoto, Akinari Okubo, Rie Umetsu, Ryosuke Kainuma

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the magnetoresistance effect for a magnetic tunnel junction (MTJ) using a C0₂Ti_o.5Mn_o.5Al electrode on a Cr buffered MgO(00l) single crystal substrate. The C0₂Ti _o.5Mn_o.5Al formed an ordered L2₁ and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in C0 ₂Ti_o.5Mn_o.5Al annealed at 673 K. The MTJ using a C0₂Ti_o.5Mn_o.5Al electrode with B2 structure exhibited tunnel magnetoresistance (TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a C0 ₂Ti_o.5Mn_o.5Al electrode with L2₁ structure in this study.

Original language	English
Pages (from-to)	670-673
Number of pages	4
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	73
Issue number	9
DOIs	https://doi.org/10.2320/jinstmet.73.670
Publication status	Published - 2009 Sept

Keywords

Ferromagnetic tunnel junction
Full-Heusler alloy
Tunnel magnetoresistance effect

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

Access to Document

10.2320/jinstmet.73.670

Cite this

@article{ed81d2c6657c49f0853b094136e7c09b,

title = "Magnetoresistance effect of magnetic tunnel junction with C0 2Tio.5Mno.5Al full-heusler alloy thin film",

abstract = "We investigated the magnetoresistance effect for a magnetic tunnel junction (MTJ) using a C02Tio.5Mno.5Al electrode on a Cr buffered MgO(00l) single crystal substrate. The C02Ti o.5Mno.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in C0 2Tio.5Mno.5Al annealed at 673 K. The MTJ using a C02Tio.5Mno.5Al electrode with B2 structure exhibited tunnel magnetoresistance (TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a C0 2Tio.5Mno.5Al electrode with L21 structure in this study.",

keywords = "Ferromagnetic tunnel junction, Full-Heusler alloy, Tunnel magnetoresistance effect",

author = "Akihiro Sasaki and Nobuki Tezuka and Satoshi Sugimoto and Akinari Okubo and Rie Umetsu and Ryosuke Kainuma",

year = "2009",

month = sep,

doi = "10.2320/jinstmet.73.670",

language = "English",

volume = "73",

pages = "670--673",

journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",

issn = "0021-4876",

publisher = "Japan Institute of Metals (JIM)",

number = "9",

}

TY - JOUR

T1 - Magnetoresistance effect of magnetic tunnel junction with C0 2Tio.5Mno.5Al full-heusler alloy thin film

AU - Sasaki, Akihiro

AU - Tezuka, Nobuki

AU - Sugimoto, Satoshi

AU - Okubo, Akinari

AU - Umetsu, Rie

AU - Kainuma, Ryosuke

PY - 2009/9

Y1 - 2009/9

N2 - We investigated the magnetoresistance effect for a magnetic tunnel junction (MTJ) using a C02Tio.5Mno.5Al electrode on a Cr buffered MgO(00l) single crystal substrate. The C02Ti o.5Mno.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in C0 2Tio.5Mno.5Al annealed at 673 K. The MTJ using a C02Tio.5Mno.5Al electrode with B2 structure exhibited tunnel magnetoresistance (TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a C0 2Tio.5Mno.5Al electrode with L21 structure in this study.

AB - We investigated the magnetoresistance effect for a magnetic tunnel junction (MTJ) using a C02Tio.5Mno.5Al electrode on a Cr buffered MgO(00l) single crystal substrate. The C02Ti o.5Mno.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in C0 2Tio.5Mno.5Al annealed at 673 K. The MTJ using a C02Tio.5Mno.5Al electrode with B2 structure exhibited tunnel magnetoresistance (TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a C0 2Tio.5Mno.5Al electrode with L21 structure in this study.

KW - Ferromagnetic tunnel junction

KW - Full-Heusler alloy

KW - Tunnel magnetoresistance effect

UR - http://www.scopus.com/inward/record.url?scp=70350359335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350359335&partnerID=8YFLogxK

U2 - 10.2320/jinstmet.73.670

DO - 10.2320/jinstmet.73.670

M3 - Article

AN - SCOPUS:70350359335

SN - 0021-4876

VL - 73

SP - 670

EP - 673

JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

IS - 9

ER -