Magnetoresistance in FeSi films grown by molecular beam epitaxy

R. J. Highmore, K. Yusu, S. N. Okuno, Y. Saito, K. Inomata

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7 Citations (Scopus)


We have used molecular beam epitaxy apparatus to grow Fe-Si films. The films were grown by first depositing a nominal 40 Å of Fe, then a nominal thickness of Si, then a further nominal 40 Å of Fe. A plot of the ratio (remanent magnetisation/saturation magnetization) versus nominal Si layer thickness shows a minimum for a nominal thickness of 25 Å, and a plot of saturation field versus nominal Si thickness has a maximum for a nominal thickness of 20 Å. We find a room temperature magnetoresistance of more than 2% in films with nominal Si layer thicknesses of 20 Å. Raising the temperature causes a decrease in (remanent magnetization/saturation magnetisation) for films with nominal Si thicknesses of 20 Å and 25 Å.

Original languageEnglish
Pages (from-to)95-101
Number of pages7
JournalJournal of Magnetism and Magnetic Materials
Issue number1-2
Publication statusPublished - 1995 Nov 2


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