Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure

Hiromi Niu Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki, Shohei Kawasaki, Kousaku Miyake, Masashi Sahashi

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.

Original languageEnglish
Pages (from-to)2848-2850
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number6
Publication statusPublished - 2007 Jun
Externally publishedYes


  • Conductive atomic-force-microscopy
  • Domain wall
  • Nanocontact magnetoresistance (MR)
  • Spin-valve

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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