Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure

Hiromi Niu Fuke; Susumu Hashimoto; Masayuki Takagishi; Hitoshi Iwasaki; Shohei Kawasaki; Kousaku Miyake; Masashi Sahashi

doi:10.1109/TMAG.2007.893117

Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure

Hiromi Niu Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki, Shohei Kawasaki, Kousaku Miyake, Masashi Sahashi

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm² by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.

Original language	English
Pages (from-to)	2848-2850
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2007.893117
Publication status	Published - 2007 Jun
Externally published	Yes

Keywords

Conductive atomic-force-microscopy
Domain wall
Nanocontact magnetoresistance (MR)
Spin-valve

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2007.893117

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title = "Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure",

abstract = "We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.",

keywords = "Conductive atomic-force-microscopy, Domain wall, Nanocontact magnetoresistance (MR), Spin-valve",

author = "Fuke, {Hiromi Niu} and Susumu Hashimoto and Masayuki Takagishi and Hitoshi Iwasaki and Shohei Kawasaki and Kousaku Miyake and Masashi Sahashi",

year = "2007",

month = jun,

doi = "10.1109/TMAG.2007.893117",

language = "English",

volume = "43",

pages = "2848--2850",

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T1 - Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure

AU - Fuke, Hiromi Niu

AU - Hashimoto, Susumu

AU - Takagishi, Masayuki

AU - Iwasaki, Hitoshi

AU - Kawasaki, Shohei

AU - Miyake, Kousaku

AU - Sahashi, Masashi

PY - 2007/6

Y1 - 2007/6

N2 - We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.

AB - We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Ωμm2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact.

KW - Conductive atomic-force-microscopy

KW - Domain wall

KW - Nanocontact magnetoresistance (MR)

KW - Spin-valve

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JF - IEEE Transactions on Magnetics

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ER -

Magnetoresistance of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure

Abstract

Keywords

ASJC Scopus subject areas

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