TY - JOUR
T1 - Magnetoresistance oscillations induced by spin orbit interaction and intersubband scattering in a gated InP/In0.8Ga0.2As/ In0.52Al0.48As heterostructure
AU - Abe, Mitsuhiro
AU - Kohda, Makoto
AU - Nitta, Junsaku
PY - 2006
Y1 - 2006
N2 - We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In0.8Ga0.2As/In0.52Al 0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, BFMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to BFMIS, double fundamental peak structure induced by SOI appears above Vg = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 -11 eVm and 9.65 × 10-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.
AB - We have investigated the magnetoresistance (MR) oscillations induced by spin-orbit interaction (SOI) and magneto intersubband scattering (MIS) in a gated InP/In0.8Ga0.2As/In0.52Al 0.48As two dimensional electron gas. From the analysis of beating pattern in MR oscillations, fundamental field caused by MIS, BFMIS, in fast Fourier transform spectra shifts lower as increasing the gate voltage. In contrast to BFMIS, double fundamental peak structure induced by SOI appears above Vg = 5.0 V and shifts higher with the gate bias voltage. These two features are clearly distinguished each other in higher gate voltage above 7.0 V, which enables the extraction of Rashba SOI parameter α. The obtained α parameters are between 1.11 × 10 -11 eVm and 9.65 × 10-12 eVm, which are about 5 time larger values than the results calculated from the k.p formalism for the SOI parameter.
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U2 - 10.1002/pssc.200672828
DO - 10.1002/pssc.200672828
M3 - Conference article
AN - SCOPUS:49549109859
SN - 1862-6351
VL - 3
SP - 4243
EP - 4246
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 12
T2 - 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV
Y2 - 15 August 2006 through 18 August 2006
ER -