Abstract
Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 μm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 2223-2226 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 475-479 |
| Issue number | III |
| DOIs | |
| Publication status | Published - 2005 Jan 1 |
| Event | PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China Duration: 2004 Nov 2 → 2004 Nov 5 |
Keywords
- Magnetoresistance
- Magnetoresistive-switch effect
- Wet etching
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering