Magnetotransport properties of all semiconductor (Ga,Mn)As/ (Al,Ga)As/(Ga,Mn)As tri-layer structures

F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


To investigate the magnetic coupling in all-semiconductor structure, ferromagnet/nonmagnet/ferromagnet tri-layer structures using (Ga,Mn)As as a ferromagnetic layer and GaAs or (Al,Ga)As as a nonmagnetic layer were prepared and their magnetic and magnetotransport properties were investigated. The results show that the interaction between the two (Ga,Mn)As layers decreases as the GaAs thickness increases or Al content of the (Al,Ga)As spacer increases. This shows that the carriers present in the nonmagnetic layer mediate the magnetic coupling between the two ferromagnetic layers in the present all-semiconductor system.

Original languageEnglish
Pages (from-to)573-576
Number of pages4
JournalPhysica B: Condensed Matter
Publication statusPublished - 1998 Dec 2


  • (Ga,Mn)As
  • Exchange coupling
  • III-V semiconductor
  • RKKY interaction
  • Tri-layer structure


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