Abstract
The preparation of dilute alloy of GaSb and Mn, (Ga, Mn)Sb, with a few percent of Mn by molecular beam epitaxy and its magnetotransport properties are reported. Magnetotransport measurements show a pronounced anomalous Hall effect and negative magnetoresistance below 50 K. The results suggest that Mn atoms are incorporated in the GaSb host, resulting in the formation of the ferromagnetic semiconductor, (Ga, Mn)Sb.
| Original language | English |
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| Pages (from-to) | 6442-6444 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 87 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2000 May 1 |