Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

F. Matsukura, M. Sawicki, T. Dietl, Daichi Chiba, H. Ohno

Research output: Contribution to journalConference articlepeer-review

124 Citations (Scopus)


Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization.

Original languageEnglish
Pages (from-to)1032-1036
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Publication statusPublished - 2004 Mar
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18


  • (Ga
  • Ferromagnetic semiconductors
  • Magnetic anisotropy
  • Magnetoresistance
  • Mn)As
  • Weak localization


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