TY - JOUR
T1 - Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors
AU - Ohno, H.
AU - Munekata, H.
AU - Penney, T.
AU - Von Molnar, S.
AU - Chang, L. L.
PY - 1992
Y1 - 1992
N2 - Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.
AB - Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.
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U2 - 10.1103/PhysRevLett.68.2664
DO - 10.1103/PhysRevLett.68.2664
M3 - Article
AN - SCOPUS:4344610534
SN - 0031-9007
VL - 68
SP - 2664
EP - 2667
JO - Physical Review Letters
JF - Physical Review Letters
IS - 17
ER -