Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As

N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, T. Sakon, M. Motokawa, H. Ohno

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Tunneling and magnetotunneling properties of GaAs-based p-type double barrier resonant tunneling diodes (RTD's) with a ferromagnetic (Ga,Mn)As emitter layer are studied. Current-voltage characteristics of RTD's revealed the presence of spontaneous magnetization in the (Ga,Mn)As emitter. The transverse magnetic field results suggest that the valence band dispersion of (Ga,Mn)As is different from GaAs.

Original languageEnglish
Pages (from-to)561-564
Number of pages4
JournalPhysica B: Condensed Matter
Publication statusPublished - 1998 Dec 2


  • (Ga,Mn)As
  • Magnetic semiconductor
  • Spin splitting
  • Tunneling


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