Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr2O3 is one of the few antiferromagnets that can achieve 180° manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr2O3, with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr2O3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr2O3/Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.
- antiferromagnetic spintronics
- exchange bias
- parasitic magnetization