TY - JOUR
T1 - Manipulation of saturation magnetization and perpendicular magnetic anisotropy in epitaxial C ox M n4-x N films with ferrimagnetic compensation
AU - Ito, Keita
AU - Yasutomi, Yoko
AU - Zhu, Siyuan
AU - Nurmamat, Munisa
AU - Tahara, Masaki
AU - Toko, Kaoru
AU - Akiyama, Ryota
AU - Takeda, Yukiharu
AU - Saitoh, Yuji
AU - Oguchi, Tamio
AU - Kimura, Akio
AU - Suemasu, Takashi
N1 - Funding Information:
This work was supported in part by JSPS KAKENHI (Grants No. 12J02075, No. 14J01804, No. 26249037, No. 17K14651, and No. 17H06154), the Cooperative Research Project of the Research Institute of Electric Communication, Tohoku University, and Center for Spintronics Research Network, Tohoku University and Osaka University. curve measurements were performed with the help of Dr. R. Ishikawa, Dr. H. Oikawa, and Prof. S. Kuroda of University of Tsukuba. XAS and XMCD measurements were performed at BL23SU of SPring-8 (Proposal No. 2013B3880) under the Shared Use Program of JAEA Facilities (Proposal No. 2013B-E32) with the approval of Nanotechnology Platform project supported by MEXT, Japan.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/3/1
Y1 - 2020/3/1
N2 - Spintronics devices utilizing a magnetic domain-wall motion have attracted increasing attention, and ferrimagnetic materials with almost-compensated magnetic moments are highly required to realize the fast magnetic domain-wall motion. Here, we report a key function for this purpose in the antiperovskite CoxMn4-xN film. We have grown CoxMn4-xN films with various Co/Mn ratios on SrTiO3(001) by molecular-beam epitaxy. High-quality growth is confirmed and a perpendicular magnetization emerges at x=0, 0.2, 0.5, and 0.8, whereas it turns into in plane for x≥1.1. The saturation magnetization MS decreases as x increases and reaches a minimum value of 15emu/cm3 at x=0.8. Then, it increases with x when 0.8≤x≤3.6 and saturates. These results indicate that MS and magnetic anisotropy of CoxMn4-xN films can be manipulated by the Co composition. X-ray absorption spectroscopy and magnetic circular dichroism measurements revealed that Co atoms tend to occupy the I site in the antiperovskite lattice and reasonably explains the origin of minimum MS near x=0.8, where a compensation of magnetic moments occurs among different atomic sites. We consider that the nearly compensated ferrimagnetic Co0.8Mn3.2N is suitable for application to current-induced domain-wall motion devices.
AB - Spintronics devices utilizing a magnetic domain-wall motion have attracted increasing attention, and ferrimagnetic materials with almost-compensated magnetic moments are highly required to realize the fast magnetic domain-wall motion. Here, we report a key function for this purpose in the antiperovskite CoxMn4-xN film. We have grown CoxMn4-xN films with various Co/Mn ratios on SrTiO3(001) by molecular-beam epitaxy. High-quality growth is confirmed and a perpendicular magnetization emerges at x=0, 0.2, 0.5, and 0.8, whereas it turns into in plane for x≥1.1. The saturation magnetization MS decreases as x increases and reaches a minimum value of 15emu/cm3 at x=0.8. Then, it increases with x when 0.8≤x≤3.6 and saturates. These results indicate that MS and magnetic anisotropy of CoxMn4-xN films can be manipulated by the Co composition. X-ray absorption spectroscopy and magnetic circular dichroism measurements revealed that Co atoms tend to occupy the I site in the antiperovskite lattice and reasonably explains the origin of minimum MS near x=0.8, where a compensation of magnetic moments occurs among different atomic sites. We consider that the nearly compensated ferrimagnetic Co0.8Mn3.2N is suitable for application to current-induced domain-wall motion devices.
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U2 - 10.1103/PhysRevB.101.104401
DO - 10.1103/PhysRevB.101.104401
M3 - Article
AN - SCOPUS:85083335146
SN - 2469-9950
VL - 101
JO - Physical Review B
JF - Physical Review B
IS - 10
M1 - 104401
ER -