TY - GEN
T1 - Material innovation for MOL, BEOL, and 3D integration
AU - Koike, J.
AU - Hosseini, M.
AU - Hai, H. T.
AU - Ando, D.
AU - Sutou, Y.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/1/23
Y1 - 2018/1/23
N2 - This paper presents new materials and processes for advanced technology node of Si semiconductor devices. For MOL, Co contact plug and amorphous Co-Ti barrier showed a good adhesion, limited growth of Co silicide, and a low contact resistivity of the order of 10-9 Ωcm2 on both n+ and p+ Si. For BEOL, a CVD-MnOx layer could be formed conformally in high-aspect ratio contact holes. The ALD-MnOx layer of 1.2 nm thick showed a good diffusion barrier property at 400 °C. For 3D integration, TSV of 10 μm diameter and 80 μm depth could be filled with low resistivity sintered Cu paste without voids.
AB - This paper presents new materials and processes for advanced technology node of Si semiconductor devices. For MOL, Co contact plug and amorphous Co-Ti barrier showed a good adhesion, limited growth of Co silicide, and a low contact resistivity of the order of 10-9 Ωcm2 on both n+ and p+ Si. For BEOL, a CVD-MnOx layer could be formed conformally in high-aspect ratio contact holes. The ALD-MnOx layer of 1.2 nm thick showed a good diffusion barrier property at 400 °C. For 3D integration, TSV of 10 μm diameter and 80 μm depth could be filled with low resistivity sintered Cu paste without voids.
UR - http://www.scopus.com/inward/record.url?scp=85045192383&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85045192383&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2017.8268485
DO - 10.1109/IEDM.2017.8268485
M3 - Conference contribution
AN - SCOPUS:85045192383
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 32.3.1-32.3.4
BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017
Y2 - 2 December 2017 through 6 December 2017
ER -