MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1-xSrx)yMnO3-δ oriented thin films

Guojun Liu; Hongmei Wang; H. Makino; T. Hanada; T. Yao

doi:10.1109/MBE.2002.1037894

MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3-δ oriented thin films

Guojun Liu, Hongmei Wang, H. Makino, T. Hanada, T. Yao

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

There has been renewed activities recently in studying the magnetotransport properties of doped manganese perovskite thin films L_1-xA_xMnO_3-δ(L=La,Pr; A=Ca,SrBa), owning to both the rich variety of physical properties they possess and their promising applications. While most efforts were devoted to the stoichiometric Li_1-xA_xMnO_3-δ phases, those phases deviated from stoichiometry are also attracting increasing interests because they exhibit more interesting properties such as different phase transition temperatures and marked low field magnetoresistance, and the most important, they offer other degree of freedom to adjust the properties of these materials. It was reported that stoichiometric thin films were usually obtained with such methods as pulsed laser deposition (PLD), sputtering, chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD). We report on the growth and structural, electric and magnetotransport characterizations of epitaxial (Pr_1-xSr_x)_yMnO_3-δ thin films grown by oxygen plasma assisted molecular beam epitaxy (MBE).

Original language	English
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331
Number of pages	1
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037894
Publication status	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: 2002 Sept 15 → 2002 Sept 20

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	02/9/15 → 02/9/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037894

Cite this

Liu, G., Wang, H., Makino, H., Hanada, T., & Yao, T. (2002). MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3-δ oriented thin films. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 331). [1037894] (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037894

MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3-δ oriented thin films. / Liu, Guojun; Wang, Hongmei; Makino, H. et al.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 331 1037894 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, G, Wang, H, Makino, H, Hanada, T & Yao, T 2002, MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3-δ oriented thin films. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037894, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 331, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 02/9/15. https://doi.org/10.1109/MBE.2002.1037894

Liu G, Wang H, Makino H, Hanada T, Yao T. MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3-δ oriented thin films. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 331. 1037894. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037894

Liu, Guojun ; Wang, Hongmei ; Makino, H. et al. / MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr_1-xSr_x)_yMnO_3-δ oriented thin films. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 331 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

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abstract = "There has been renewed activities recently in studying the magnetotransport properties of doped manganese perovskite thin films L1-xAxMnO3-δ(L=La,Pr; A=Ca,SrBa), owning to both the rich variety of physical properties they possess and their promising applications. While most efforts were devoted to the stoichiometric Li1-xAxMnO3-δ phases, those phases deviated from stoichiometry are also attracting increasing interests because they exhibit more interesting properties such as different phase transition temperatures and marked low field magnetoresistance, and the most important, they offer other degree of freedom to adjust the properties of these materials. It was reported that stoichiometric thin films were usually obtained with such methods as pulsed laser deposition (PLD), sputtering, chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD). We report on the growth and structural, electric and magnetotransport characterizations of epitaxial (Pr1-xSrx)yMnO3-δ thin films grown by oxygen plasma assisted molecular beam epitaxy (MBE).",

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