Measurement of creep kinetics at Al-Si interfaces

K. A. Peterson, I. Dutta, M. W. Chen

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)


    An experimental approach to isolate and measure the creep behavior of interfaces in multi-component systems was and used to study model diffusion-bonded Al-Si interfaces. Experiments showed that the Al-Si interface undergoes diffusionally accomodated sliding under shear stresses at high temperatures. The measured kinetics showed that the mechanism of sliding is interfacial diffusion-controlled diffusional flow. Interfacial sliding occurs due to mass-transport under a periodically varying normal stress field acting on the interface due to an applied far-field shear stress, with the mass transport path being associated with the interface.

    Original languageEnglish
    Pages (from-to)649-654
    Number of pages6
    JournalScripta Materialia
    Issue number10
    Publication statusPublished - 2002 Nov

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering
    • Metals and Alloys


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