Measurement of creep kinetics at Al-Si interfaces

K. A. Peterson; I. Dutta; M. W. Chen

doi:10.1016/S1359-6462(02)00262-2

Measurement of creep kinetics at Al-Si interfaces

K. A. Peterson, I. Dutta, M. W. Chen

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

An experimental approach to isolate and measure the creep behavior of interfaces in multi-component systems was and used to study model diffusion-bonded Al-Si interfaces. Experiments showed that the Al-Si interface undergoes diffusionally accomodated sliding under shear stresses at high temperatures. The measured kinetics showed that the mechanism of sliding is interfacial diffusion-controlled diffusional flow. Interfacial sliding occurs due to mass-transport under a periodically varying normal stress field acting on the interface due to an applied far-field shear stress, with the mass transport path being associated with the interface.

Original language	English
Pages (from-to)	649-654
Number of pages	6
Journal	Scripta Materialia
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/S1359-6462(02)00262-2
Publication status	Published - 2002 Nov

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/S1359-6462(02)00262-2

Cite this

@article{d1e901a6ceff4a1da89ccc4e5bb7d72b,

title = "Measurement of creep kinetics at Al-Si interfaces",

abstract = "An experimental approach to isolate and measure the creep behavior of interfaces in multi-component systems was and used to study model diffusion-bonded Al-Si interfaces. Experiments showed that the Al-Si interface undergoes diffusionally accomodated sliding under shear stresses at high temperatures. The measured kinetics showed that the mechanism of sliding is interfacial diffusion-controlled diffusional flow. Interfacial sliding occurs due to mass-transport under a periodically varying normal stress field acting on the interface due to an applied far-field shear stress, with the mass transport path being associated with the interface.",

author = "Peterson, {K. A.} and I. Dutta and Chen, {M. W.}",

note = "Funding Information: This work was supported by the National Science Foundation (DMR) under grant #DMR-0075281.",

year = "2002",

month = nov,

doi = "10.1016/S1359-6462(02)00262-2",

language = "English",

volume = "47",

pages = "649--654",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

number = "10",

}

TY - JOUR

T1 - Measurement of creep kinetics at Al-Si interfaces

AU - Peterson, K. A.

AU - Dutta, I.

AU - Chen, M. W.

N1 - Funding Information: This work was supported by the National Science Foundation (DMR) under grant #DMR-0075281.

PY - 2002/11

Y1 - 2002/11

N2 - An experimental approach to isolate and measure the creep behavior of interfaces in multi-component systems was and used to study model diffusion-bonded Al-Si interfaces. Experiments showed that the Al-Si interface undergoes diffusionally accomodated sliding under shear stresses at high temperatures. The measured kinetics showed that the mechanism of sliding is interfacial diffusion-controlled diffusional flow. Interfacial sliding occurs due to mass-transport under a periodically varying normal stress field acting on the interface due to an applied far-field shear stress, with the mass transport path being associated with the interface.

AB - An experimental approach to isolate and measure the creep behavior of interfaces in multi-component systems was and used to study model diffusion-bonded Al-Si interfaces. Experiments showed that the Al-Si interface undergoes diffusionally accomodated sliding under shear stresses at high temperatures. The measured kinetics showed that the mechanism of sliding is interfacial diffusion-controlled diffusional flow. Interfacial sliding occurs due to mass-transport under a periodically varying normal stress field acting on the interface due to an applied far-field shear stress, with the mass transport path being associated with the interface.

UR - http://www.scopus.com/inward/record.url?scp=0036836492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036836492&partnerID=8YFLogxK

U2 - 10.1016/S1359-6462(02)00262-2

DO - 10.1016/S1359-6462(02)00262-2

M3 - Article

AN - SCOPUS:0036836492

SN - 1359-6462

VL - 47

SP - 649

EP - 654

JO - Scripta Materialia

JF - Scripta Materialia

IS - 10

ER -

Measurement of creep kinetics at Al-Si interfaces

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this