TY - JOUR
T1 - Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy
AU - Watanabe, Kentaro
AU - Nakamura, Yoshiaki
AU - Ichikawa, Masakazu
N1 - Funding Information:
The authors are grateful to Koji Maeda of the University of Tokyo and his colleagues for the electrochemical etching device. This work was supported by JSPS.KAKENHI (Grant No. 19710088).
PY - 2008
Y1 - 2008
N2 - The authors developed modulation scanning tunneling microscope cathodoluminescence (STM-CL) spectroscopy where low-energy (∼100 eV) electrons field-emitted from scanning tunneling microscope(STM) tips were used as a bright excitation source. The modulation STM-CL spectroscopy of Si-doped GaAs (110) cleaved surfaces showed that the peak redshifted from GaAs band-edge luminescence in some of the sample positions. These position-dependent redshifts, which were explained by the transition related to local Si acceptors, demonstrated a spatial resolution of less than 600 nm in the modulation STM-CL spectroscopy.
AB - The authors developed modulation scanning tunneling microscope cathodoluminescence (STM-CL) spectroscopy where low-energy (∼100 eV) electrons field-emitted from scanning tunneling microscope(STM) tips were used as a bright excitation source. The modulation STM-CL spectroscopy of Si-doped GaAs (110) cleaved surfaces showed that the peak redshifted from GaAs band-edge luminescence in some of the sample positions. These position-dependent redshifts, which were explained by the transition related to local Si acceptors, demonstrated a spatial resolution of less than 600 nm in the modulation STM-CL spectroscopy.
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U2 - 10.1116/1.2830640
DO - 10.1116/1.2830640
M3 - Article
AN - SCOPUS:38849126337
SN - 1071-1023
VL - 26
SP - 195
EP - 200
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 1
ER -