The dynamic activities of dislocations and the mechanical properties of various III-V compound semiconductors with a sphalerite structure are reviewed, including current results. Macroscopic stress-strain characteristics and yield strength are described quantitatively in terms of dislocation dynamics on the basis of knowledge of the dynamic behaviour of individual dislocations in these compounds. Various impurities in the compounds affect the mechanical strength through two kinds of effects on individual dislocations: one is the modification of dislocation mobility in glide motion and the other is the immobilization of dislocations. The velocities of rate controlling dislocations during deformation are deduced from analysis of the dynamic state of dislocations.
|Number of pages||16|
|Journal||Journal de Physique III|
|Publication status||Published - 1997 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)