Mechanical strengths of silicon crystals involving oxygen at various concentrations up to 1018 atoms/cm3 are investigated with the use of crystals grown by the Czochralski technique in magnetic field. Oxygen atoms dispersed on interstitial sites at any concentration have almost no influence on the dislocation processes that control the mechanical behavior of a dislocation-free crystal. Oxygen atoms in a dislocated crystal lock dislocations effectively and result in the strengthening of the crystal. Locking of dislocations becomes more effective as the concentration of oxygen in the crystal increases. Softening of crystals due to precipitation of oxygen at elevated temperature occurs rapidly in highly concentrated crystals with oxygen, but is almost absent or takes place slowly in crystals of oxygen concentrations lower than about 5×101 7 atoms/cm3.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1984 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)