Mechanical strength of silicon crystals as a function of the oxygen concentration

Ichiro Yonenaga, Koji Sumino, Kinji Hoshi

Research output: Contribution to journalArticlepeer-review

80 Citations (Scopus)


Mechanical strengths of silicon crystals involving oxygen at various concentrations up to 1018 atoms/cm3 are investigated with the use of crystals grown by the Czochralski technique in magnetic field. Oxygen atoms dispersed on interstitial sites at any concentration have almost no influence on the dislocation processes that control the mechanical behavior of a dislocation-free crystal. Oxygen atoms in a dislocated crystal lock dislocations effectively and result in the strengthening of the crystal. Locking of dislocations becomes more effective as the concentration of oxygen in the crystal increases. Softening of crystals due to precipitation of oxygen at elevated temperature occurs rapidly in highly concentrated crystals with oxygen, but is almost absent or takes place slowly in crystals of oxygen concentrations lower than about 5×101 7 atoms/cm3.

Original languageEnglish
Pages (from-to)2346-2350
Number of pages5
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 1984 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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