Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal

R. Hajika; S. Yoshida; W. Makishi; Y. Kanamori; S. Tanaka; M. Esashi

doi:10.1109/MEMSYS.2013.6474269

Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal

R. Hajika, S. Yoshida, W. Makishi, Y. Kanamori, S. Tanaka, M. Esashi

ENG - Robotics

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

This paper reports on the strengthening effect of hydrogen anneal on torsional fracture strength of single crystal silicon (SCS). Moving-magnet-type MEMS mirrors were prepared by fabricating SCS and silicon on insulator (SOI) wafers via deep reactive ion etching (DRIE) as fracture test specimens. As a result of the fracture test of the torsion bar on the mirrors, the torsion bar fabricated using a SCS wafer could be strengthened to about 4 times in average by hydrogen anneal. By contrast, that using a SOI wafer was weaken to half. This mechanical strengthening effect has the potential ability to provide highly-reliable and tough SCS-based MEMS devices.

Original language	English
Title of host publication	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Pages	425-428
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2013.6474269
Publication status	Published - 2013
Event	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China Duration: 2013 Jan 20 → 2013 Jan 24

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Country/Territory	Taiwan, Province of China
City	Taipei
Period	13/1/20 → 13/1/24

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10.1109/MEMSYS.2013.6474269

Cite this

Hajika, R., Yoshida, S., Makishi, W., Kanamori, Y., Tanaka, S., & Esashi, M. (2013). Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 (pp. 425-428). Article 6474269 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2013.6474269

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title = "Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal",

abstract = "This paper reports on the strengthening effect of hydrogen anneal on torsional fracture strength of single crystal silicon (SCS). Moving-magnet-type MEMS mirrors were prepared by fabricating SCS and silicon on insulator (SOI) wafers via deep reactive ion etching (DRIE) as fracture test specimens. As a result of the fracture test of the torsion bar on the mirrors, the torsion bar fabricated using a SCS wafer could be strengthened to about 4 times in average by hydrogen anneal. By contrast, that using a SOI wafer was weaken to half. This mechanical strengthening effect has the potential ability to provide highly-reliable and tough SCS-based MEMS devices.",

author = "R. Hajika and S. Yoshida and W. Makishi and Y. Kanamori and S. Tanaka and M. Esashi",

year = "2013",

doi = "10.1109/MEMSYS.2013.6474269",

language = "English",

isbn = "9781467356558",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

pages = "425--428",

booktitle = "IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013",

note = "IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 ; Conference date: 20-01-2013 Through 24-01-2013",

}

Hajika, R, Yoshida, S, Makishi, W, Kanamori, Y , Tanaka, S & Esashi, M 2013, Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal. in IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013., 6474269, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 425-428, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013, Taipei, Taiwan, Province of China, 13/1/20. https://doi.org/10.1109/MEMSYS.2013.6474269

Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal. / Hajika, R.; Yoshida, S.; Makishi, W. et al.
IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 425-428 6474269 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal

AU - Hajika, R.

AU - Yoshida, S.

AU - Makishi, W.

AU - Kanamori, Y.

AU - Tanaka, S.

AU - Esashi, M.

PY - 2013

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N2 - This paper reports on the strengthening effect of hydrogen anneal on torsional fracture strength of single crystal silicon (SCS). Moving-magnet-type MEMS mirrors were prepared by fabricating SCS and silicon on insulator (SOI) wafers via deep reactive ion etching (DRIE) as fracture test specimens. As a result of the fracture test of the torsion bar on the mirrors, the torsion bar fabricated using a SCS wafer could be strengthened to about 4 times in average by hydrogen anneal. By contrast, that using a SOI wafer was weaken to half. This mechanical strengthening effect has the potential ability to provide highly-reliable and tough SCS-based MEMS devices.

AB - This paper reports on the strengthening effect of hydrogen anneal on torsional fracture strength of single crystal silicon (SCS). Moving-magnet-type MEMS mirrors were prepared by fabricating SCS and silicon on insulator (SOI) wafers via deep reactive ion etching (DRIE) as fracture test specimens. As a result of the fracture test of the torsion bar on the mirrors, the torsion bar fabricated using a SCS wafer could be strengthened to about 4 times in average by hydrogen anneal. By contrast, that using a SOI wafer was weaken to half. This mechanical strengthening effect has the potential ability to provide highly-reliable and tough SCS-based MEMS devices.

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T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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BT - IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013

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Hajika R, Yoshida S, Makishi W, Kanamori Y , Tanaka S, Esashi M. Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 425-428. 6474269. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2013.6474269

Mechanical strengthening of silicon torsion bar of MEMS scanning mirror by hydrogen anneal

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