Mechanical-stress-controlled silicide interconnections for highly reliable semiconductor devices

Hiromi Shimazu, Hideo Miura

Research output: Contribution to journalConference articlepeer-review


Mechanical stress develops in silicide interconnection structures due to the volumetric shrinkage of newly grown silicide film during silicidation. Silicidation-induced stress of about 1 GPa was measured by inducing a reaction between a silicon wafer and a titanium film deposited on the wafer. The stress developed near the interface between the grown silicide film. The remaining silicon was analyzed using a finite-element method. The critical stress for delamination at the interface was determined by comparing the results of the estimated stress at the interface with the cross-sectional observation results of different interconnection-structures test samples. We also determined the critical thickness of TiSi2 and the diameter of silicide contacts for eliminating delamination at the interface.

Original languageEnglish
Pages (from-to)657-662
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventSilicon Materials - Processing, Characterization and Reliability - San Francisco, CA, United States
Duration: 2002 Apr 12002 Apr 5


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