The temperature dependence of the drain current drift in InP MISFETs is shown to be a measurement artefact. A model involving interface states below the conduction band is presented which explains the current drift quantitatively. It is shown that incorporation of thin native oxide interfacial layer is effective in suppressing the current drift.
|Title of host publication||Institute of Physics Conference Series|
|Editors||B. de Cremoux|
|Number of pages||6|
|Publication status||Published - 1985|
|Name||Institute of Physics Conference Series|