MECHANISM AND SUPPRESSION OF DRAIN CURRENT DRIFT IN InP MISFETs.

Hideki Hasegawa; Takayuki Sawada; Hideo Ohno

MECHANISM AND SUPPRESSION OF DRAIN CURRENT DRIFT IN InP MISFETs.

Hideki Hasegawa, Takayuki Sawada, Hideo Ohno

Leadership

Hokkaido University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The temperature dependence of the drain current drift in InP MISFETs is shown to be a measurement artefact. A model involving interface states below the conduction band is presented which explains the current drift quantitatively. It is shown that incorporation of thin native oxide interfacial layer is effective in suppressing the current drift.

Original language	English
Title of host publication	Institute of Physics Conference Series
Editors	B. de Cremoux
Pages	569-574
Number of pages	6
Edition	74
Publication status	Published - 1985

Publication series

Name	Institute of Physics Conference Series
Number	74
ISSN (Print)	0373-0751

Cite this

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title = "MECHANISM AND SUPPRESSION OF DRAIN CURRENT DRIFT IN InP MISFETs.",

abstract = "The temperature dependence of the drain current drift in InP MISFETs is shown to be a measurement artefact. A model involving interface states below the conduction band is presented which explains the current drift quantitatively. It is shown that incorporation of thin native oxide interfacial layer is effective in suppressing the current drift.",

author = "Hideki Hasegawa and Takayuki Sawada and Hideo Ohno",

year = "1985",

language = "English",

isbn = "0854981659",

series = "Institute of Physics Conference Series",

number = "74",

pages = "569--574",

editor = "{de Cremoux}, B.",

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edition = "74",

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TY - GEN

T1 - MECHANISM AND SUPPRESSION OF DRAIN CURRENT DRIFT IN InP MISFETs.

AU - Hasegawa, Hideki

AU - Sawada, Takayuki

AU - Ohno, Hideo

PY - 1985

Y1 - 1985

N2 - The temperature dependence of the drain current drift in InP MISFETs is shown to be a measurement artefact. A model involving interface states below the conduction band is presented which explains the current drift quantitatively. It is shown that incorporation of thin native oxide interfacial layer is effective in suppressing the current drift.

AB - The temperature dependence of the drain current drift in InP MISFETs is shown to be a measurement artefact. A model involving interface states below the conduction band is presented which explains the current drift quantitatively. It is shown that incorporation of thin native oxide interfacial layer is effective in suppressing the current drift.

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UR - http://www.scopus.com/inward/citedby.url?scp=0022243515&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022243515

SN - 0854981659

T3 - Institute of Physics Conference Series

SP - 569

EP - 574

BT - Institute of Physics Conference Series

A2 - de Cremoux, B.

ER -

MECHANISM AND SUPPRESSION OF DRAIN CURRENT DRIFT IN InP MISFETs.

Abstract

Publication series

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