Mechanism of AC-stress-induced leakage current in EEPROM tunnel oxides

K. Shimizu, T. Endoh, H. Iizuka

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


A new model is proposed for the ac-stress-induced leakage current in flash EEPROM tunnel oxides. This model is based on tunneling trap sites generated (increased leakage) during the on-time of a stress pulse and deactivated (decreased leakage) during the off-time. We have characterized this neutralization effect and its role in the reduction of the ac-stress-induced leakage current. Using the model developed in this work, the optimum programming waveform to minimize leakage current is a long single pulse with the reverse polarity bias during the long off time in the case that the total on and off time is constant. This reduction in stress-induced leakage current is critical to minimizing read disturb errors in Flash EEPROMs.

Original languageEnglish
Pages (from-to)56-60
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1995
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 1995 Apr 41995 Apr 6


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