Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface

Shozo Kono; Go Takyo; Naoki Amano; Nickolay I. Plusnin; Kenji Mizuochi; Tomohiro Aoyama; Tadahiko Goto; Tadashi Abukawa; Akihiko Namba; Natsuo Tasumi; Yoshiki Nishibayashi; Takahiro Imai

doi:10.1143/JJAP.46.L21

Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface

Shozo Kono, Go Takyo, Naoki Amano, Nickolay I. Plusnin, Kenji Mizuochi, Tomohiro Aoyama, Tadahiko Goto, Tadashi Abukawa, Akihiko Namba, Natsuo Tasumi, Yoshiki Nishibayashi, Takahiro Imai

SRIS - SR Core Research Division

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11 Citations (Scopus)

Abstract

The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at -3 to -6 eV with respect to the substrate Fermi level (E_F) and that photoemission peaks were located at -1 to +2 eV with respect to the substrate E_F. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface Ep and there is a large amount of resistive potential drop at the emission site.

Original language	English
Pages (from-to)	L21-L24
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	1-3
DOIs	https://doi.org/10.1143/JJAP.46.L21
Publication status	Published - 2007 Jan 12

Keywords

Electron micro-spectroscopy
Field emission electron microscopy
Field emission mechanism
Phosphorous-doped diamond
Photoemission electron microscopy

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10.1143/JJAP.46.L21

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title = "Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface",

abstract = "The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at -3 to -6 eV with respect to the substrate Fermi level (EF) and that photoemission peaks were located at -1 to +2 eV with respect to the substrate EF. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface Ep and there is a large amount of resistive potential drop at the emission site.",

keywords = "Electron micro-spectroscopy, Field emission electron microscopy, Field emission mechanism, Phosphorous-doped diamond, Photoemission electron microscopy",

author = "Shozo Kono and Go Takyo and Naoki Amano and Plusnin, {Nickolay I.} and Kenji Mizuochi and Tomohiro Aoyama and Tadahiko Goto and Tadashi Abukawa and Akihiko Namba and Natsuo Tasumi and Yoshiki Nishibayashi and Takahiro Imai",

year = "2007",

month = jan,

day = "12",

doi = "10.1143/JJAP.46.L21",

language = "English",

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journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface

AU - Kono, Shozo

AU - Takyo, Go

AU - Amano, Naoki

AU - Plusnin, Nickolay I.

AU - Mizuochi, Kenji

AU - Aoyama, Tomohiro

AU - Goto, Tadahiko

AU - Abukawa, Tadashi

AU - Namba, Akihiko

AU - Tasumi, Natsuo

AU - Nishibayashi, Yoshiki

AU - Imai, Takahiro

PY - 2007/1/12

Y1 - 2007/1/12

N2 - The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at -3 to -6 eV with respect to the substrate Fermi level (EF) and that photoemission peaks were located at -1 to +2 eV with respect to the substrate EF. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface Ep and there is a large amount of resistive potential drop at the emission site.

AB - The mechanism of field emission from a highly P-doped diamond (111) surface has been studied by field/photo emission electron micro-spectroscopy. It was found that field emission peaks were located at -3 to -6 eV with respect to the substrate Fermi level (EF) and that photoemission peaks were located at -1 to +2 eV with respect to the substrate EF. Comparing this with the knowledge of work function and electron affinity of the sample, the mechanism of field emission has been elucidated. Namely, field emitted electrons are tunnel-emitted from states around the surface Ep and there is a large amount of resistive potential drop at the emission site.

KW - Electron micro-spectroscopy

KW - Field emission electron microscopy

KW - Field emission mechanism

KW - Phosphorous-doped diamond

KW - Photoemission electron microscopy

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DO - 10.1143/JJAP.46.L21

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SN - 0021-4922

VL - 46

SP - L21-L24

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1-3

ER -

Mechanism of field emission from a highly phosphorous-doped chemical vapor deposition diamond (111) surface

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Keywords

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