Ga implantation-induced intermixing is examined in terms of dose dependence and interdiffusion characteristics under conditions of dual implantation of As and Ga. At ion doses below 1015 cm-2, intermixing is mainly enhanced by the diffusion of defects. In the ion-dose region below 3×1013 cm-2, both implantation-induced damage and stoichiometric disturbances contribute to the formation of diffusing defects. The damage effect becomes dominant in the dose region around 1014 cm-2. In the dose region above 1015 cm-2, almost all interdiffusion is governed by atom coilision due to implantation.
- GaAs-AIGaAs quantum wells
- Ion implantation