Mechanism of Ga implantation-induced intermixing of GaAs-AlGaAs material

Ga implantation-induced intermixing is examined in terms of dose dependence and interdiffusion characteristics under conditions of dual implantation of As and Ga. At ion doses below 10¹⁵ cm^-2, intermixing is mainly enhanced by the diffusion of defects. In the ion-dose region below 3×10¹³ cm^-2, both implantation-induced damage and stoichiometric disturbances contribute to the formation of diffusing defects. The damage effect becomes dominant in the dose region around 10¹⁴ cm^-2. In the dose region above 10¹⁵ cm^-2, almost all interdiffusion is governed by atom coilision due to implantation.