TY - JOUR
T1 - Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
AU - Matsuo, Nozomu
AU - Ohno, Hideo
AU - Hasegawa, Hideki
PY - 1984/5
Y1 - 1984/5
N2 - Very high photoconductive gain of about 104–105is observed in GaAs photoconductive detectors for low photon flux density of 1015–1017photons/(cm2·s). This high gain decreases with increasing photon flux density. A model is proposed which includes carrier separation by surface band dending and surface recombination of photogenerated carriers controlled by surface barrier height. This model is shown to quantitatively explain the photon flux density dependence of both high gain and response time.
AB - Very high photoconductive gain of about 104–105is observed in GaAs photoconductive detectors for low photon flux density of 1015–1017photons/(cm2·s). This high gain decreases with increasing photon flux density. A model is proposed which includes carrier separation by surface band dending and surface recombination of photogenerated carriers controlled by surface barrier height. This model is shown to quantitatively explain the photon flux density dependence of both high gain and response time.
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U2 - 10.1143/JJAP.23.L299
DO - 10.1143/JJAP.23.L299
M3 - Article
AN - SCOPUS:0021428474
SN - 0021-4922
VL - 23
SP - L299-L301
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5
ER -