TY - JOUR
T1 - Mechanism of large magnetoresistance in Co2 MnSi/Ag/ Co 2 MnSi devices with current perpendicular to the plane
AU - Sakuraba, Y.
AU - Izumi, K.
AU - Iwase, T.
AU - Bosu, S.
AU - Saito, K.
AU - Takanashi, K.
AU - Miura, Y.
AU - Futatsukawa, K.
AU - Abe, K.
AU - Shirai, M.
PY - 2010/9/28
Y1 - 2010/9/28
N2 - Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (MR) devices with half-metallic Co2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the relationship between the chemical ordering in CMS and its MR properties, including bulk and interface spin-asymmetry coefficients β and γ. CMS/Ag/CMS annealed at 550°C shows the largest MR ratio: 36.4% and 67.2% at RT and 110 K, respectively. An analysis based on Valet-Fert's model reveals large spin asymmetry (γ>0.8) at the CMS/Ag interface, which contributes predominantly to the large MR ratio observed. First-principles ballistic conductance calculations for (001)-CMS/Ag/CMS predict a high majority-spin electron conductance, which could be the origin of the large γ observed in this study.
AB - Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (MR) devices with half-metallic Co2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the relationship between the chemical ordering in CMS and its MR properties, including bulk and interface spin-asymmetry coefficients β and γ. CMS/Ag/CMS annealed at 550°C shows the largest MR ratio: 36.4% and 67.2% at RT and 110 K, respectively. An analysis based on Valet-Fert's model reveals large spin asymmetry (γ>0.8) at the CMS/Ag interface, which contributes predominantly to the large MR ratio observed. First-principles ballistic conductance calculations for (001)-CMS/Ag/CMS predict a high majority-spin electron conductance, which could be the origin of the large γ observed in this study.
UR - http://www.scopus.com/inward/record.url?scp=77957554781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957554781&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.82.094444
DO - 10.1103/PhysRevB.82.094444
M3 - Article
AN - SCOPUS:77957554781
SN - 1098-0121
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 9
M1 - 094444
ER -