Mechanism of layer-by-layer homoepitaxial growth of srtio₃(100) as investigated by molecular dynamics and computer graphics

The molecular dynamics method and computer graphics were found to be effective for simulating the deposition processes of the Ti⁴⁺, Ti0²⁺, Ti0₂, and Sr₄Ti₄0₁₂ species on SrTiO₃(100). Although the collision of these species with the SrTi0₃ surface greatly disturbed the surface atoms, the migration of the deposited species to the surface vacancies led to the formation of a smooth SrTiO₃(100) surface.