Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

Maju Tomura; Chi Hsein Huang; Seiji Samukawa; Yusuke Yoshida; Takahito Ono; Satoshi Yamasaki

doi:10.1109/ICSENS.2010.5690474

Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

Maju Tomura, Chi Hsein Huang, Seiji Samukawa, Yusuke Yoshida, Takahito Ono, Satoshi Yamasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E' center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young's modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano-Electro-Mechanical Systems.

Original language	English
Title of host publication	IEEE Sensors 2010 Conference, SENSORS 2010
Pages	2534-2537
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2010.5690474
Publication status	Published - 2010
Event	9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States Duration: 2010 Nov 1 → 2010 Nov 4

Publication series

Name	Proceedings of IEEE Sensors

Other

Other	9th IEEE Sensors Conference 2010, SENSORS 2010
Country/Territory	United States
City	Waikoloa, HI
Period	10/11/1 → 10/11/4

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ICSENS.2010.5690474

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Tomura, M, Huang, CH, Samukawa, S, Yoshida, Y, Ono, T & Yamasaki, S 2010, Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process. in IEEE Sensors 2010 Conference, SENSORS 2010., 5690474, Proceedings of IEEE Sensors, pp. 2534-2537, 9th IEEE Sensors Conference 2010, SENSORS 2010, Waikoloa, HI, United States, 10/11/1. https://doi.org/10.1109/ICSENS.2010.5690474

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title = "Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process",

abstract = "We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E' center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young's modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano-Electro-Mechanical Systems.",

author = "Maju Tomura and Huang, {Chi Hsein} and Seiji Samukawa and Yusuke Yoshida and Takahito Ono and Satoshi Yamasaki",

year = "2010",

doi = "10.1109/ICSENS.2010.5690474",

language = "English",

isbn = "9781424481682",

series = "Proceedings of IEEE Sensors",

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note = "9th IEEE Sensors Conference 2010, SENSORS 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

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T1 - Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

AU - Tomura, Maju

AU - Huang, Chi Hsein

AU - Samukawa, Seiji

AU - Yoshida, Yusuke

AU - Ono, Takahito

AU - Yamasaki, Satoshi

PY - 2010

Y1 - 2010

N2 - We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E' center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young's modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano-Electro-Mechanical Systems.

AB - We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E' center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young's modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano-Electro-Mechanical Systems.

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Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

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