TY - JOUR
T1 - Mechanism of oxide deformation during silicon thermal oxidation
AU - Kageshima, H.
AU - Uematsu, M.
AU - Akagi, K.
AU - Tsuneyuki, S.
AU - Akiyama, T.
AU - Shiraishi, K.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.
AB - Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films.
KW - First-principles calculation
KW - Interface
KW - Oxidation
KW - Silicon oxide
UR - http://www.scopus.com/inward/record.url?scp=33645149361&partnerID=8YFLogxK
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U2 - 10.1016/j.physb.2005.12.105
DO - 10.1016/j.physb.2005.12.105
M3 - Conference article
AN - SCOPUS:33645149361
SN - 0921-4526
VL - 376-377
SP - 407
EP - 410
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
Y2 - 24 July 2005 through 29 July 2005
ER -