Mechanism of resistivity decrease in networked-nanographite wires for multi-layer graphene interconnects

Motonobu Sato, Shuichi Ogawa, Manabu Inukai, Eiji Ikenaga, Takayuki Muro, Yuji Takakuwa, Mizuhisa Nihei, Naoki Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigated the mechanism of resistivity decrease in networked-nanographite wires. The wires had no failure during over 200 hours under a current density of 5E5A/cm2 at about 400C. However, their resistivity decreased gradually owing to thermal stress. Raman and x-ray photoelectron spectroscopy revealed that the decrease in resistivity can be attributed to an increase in sp2 bonding corresponding to the formation of a graphene sheet. It is important to clarify the mechanism for the decrease in resistivity, not only to improve thermal stability but also to obtain lower resistivity in carbon interconnects.

Original languageEnglish
Title of host publication2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
DOIs
Publication statusPublished - 2011
Event2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 - Dresden, Germany
Duration: 2011 May 82011 May 12

Publication series

Name2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Conference

Conference2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
Country/TerritoryGermany
CityDresden
Period11/5/811/5/12

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