Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T. Nabatame; M. Kimura; H. Yamada; A. Ohi; T. Ohishi; T. Chikyow

doi:10.1149/1.3700871

Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode

T. Nabatame, M. Kimura, H. Yamada, A. Ohi, T. Ohishi, T. Chikyow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate Vfb behavior of (TaC)_1-xAl_x gated HfO₂ MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φ_m,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φ_m,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO₂/SiO₂ interface and form the AlO_x layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φ_m,eff change of gate electrode and the bottom interface dipole due to AlO_x layer as a function of PMA temperature.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	49-59
Number of pages	11
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700871
Publication status	Published - 2012
Externally published	Yes
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3700871

Cite this

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T., & Chikyow, T. (2012). Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 49-59). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700871

Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. / Nabatame, T.; Kimura, M.; Yamada, H. et al.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 49-59 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nabatame, T, Kimura, M, Yamada, H, Ohi, A, Ohishi, T & Chikyow, T 2012, Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 49-59, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700871

Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T. Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 49-59. (ECS Transactions; 3). doi: 10.1149/1.3700871

Nabatame, T. ; Kimura, M. ; Yamada, H. et al. / Mechanism of Vfb shift in HfO₂ gate stack by Al diffusion from (TaC)_1-xAl_x gate electrode. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 49-59 (ECS Transactions; 3).

@inproceedings{a74c9d888d24485da90977104720bee6,

title = "Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode",

abstract = "We investigate Vfb behavior of (TaC)1-xAlx gated HfO2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φm,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φm,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO2/SiO2 interface and form the AlOx layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φm,eff change of gate electrode and the bottom interface dipole due to AlOx layer as a function of PMA temperature.",

author = "T. Nabatame and M. Kimura and H. Yamada and A. Ohi and T. Ohishi and T. Chikyow",

year = "2012",

doi = "10.1149/1.3700871",

language = "English",

isbn = "9781566779555",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "49--59",

booktitle = "Dielectrics for Nanosystems 5",

edition = "3",

note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

}

TY - GEN

T1 - Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

AU - Nabatame, T.

AU - Kimura, M.

AU - Yamada, H.

AU - Ohi, A.

AU - Ohishi, T.

AU - Chikyow, T.

PY - 2012

Y1 - 2012

N2 - We investigate Vfb behavior of (TaC)1-xAlx gated HfO2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φm,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φm,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO2/SiO2 interface and form the AlOx layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φm,eff change of gate electrode and the bottom interface dipole due to AlOx layer as a function of PMA temperature.

AB - We investigate Vfb behavior of (TaC)1-xAlx gated HfO2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φm,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φm,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO2/SiO2 interface and form the AlOx layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φm,eff change of gate electrode and the bottom interface dipole due to AlOx layer as a function of PMA temperature.

UR - http://www.scopus.com/inward/record.url?scp=84869071924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869071924&partnerID=8YFLogxK

U2 - 10.1149/1.3700871

DO - 10.1149/1.3700871

M3 - Conference contribution

AN - SCOPUS:84869071924

SN - 9781566779555

T3 - ECS Transactions

SP - 49

EP - 59

BT - Dielectrics for Nanosystems 5

PB - Electrochemical Society Inc.

T2 - 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -