TY - GEN
T1 - Membrane-Heater-Integrated LSI for On-Site Annealing-Recovery from 20 KGY Gamma Ray Irradiation Damage
AU - Gong, Tianjiao
AU - Suzuki, Yukio
AU - Takeyama, Akinori
AU - Ohshima, Takeshi
AU - Tanaka, Shuji
N1 - Funding Information:
The facility used in this study was partly supported by “Nanotechnology Platform” program under the Ministry of Education, Culture, Sports, Science and Technology,
Funding Information:
This work was supported by JSPS KAKENHI Grant-in-Aid for Challenging Exploratory Research, grant number 18K19040. We would like to give special thanks to staffs from national institutes for quantum and radiological science and technology (QST) for high dose gamma irradiation test. Besides, we would like to thank Mr. M. S. Al Farisi for instruction in the fabrication of membrane-heater and thank Dr. C. Shao for his advice in the evaluation of LSI.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/1/25
Y1 - 2021/1/25
N2 - In this study, we proposed a novel membrane-heater-integrated LSI for on-site annealing-recovery from TID effect with low energy consumption, aiming at solving the problem of IC damage by gamma ray irradiation. The heater and membrane structure were fabricated around the LSI by using integrated MEMS technology. 20 kGy gamma-ray irradiation was performed later on the LSI samples and then the irradiated samples were annealed for recovery by integrated membrane-heater. It was found that the current of LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing at 300 °C. We report, for the first time, the successful recovery of LSI with 15 minutes from 20 kGy gamma-ray TID damage by using an integrated membrane-heater.
AB - In this study, we proposed a novel membrane-heater-integrated LSI for on-site annealing-recovery from TID effect with low energy consumption, aiming at solving the problem of IC damage by gamma ray irradiation. The heater and membrane structure were fabricated around the LSI by using integrated MEMS technology. 20 kGy gamma-ray irradiation was performed later on the LSI samples and then the irradiated samples were annealed for recovery by integrated membrane-heater. It was found that the current of LSI decreased after irradiation and almost recovered to the original level after 15-minutes annealing at 300 °C. We report, for the first time, the successful recovery of LSI with 15 minutes from 20 kGy gamma-ray TID damage by using an integrated membrane-heater.
KW - CMOS
KW - Integrated MEMS
KW - Micro-heater
KW - On-site annealing-recovery
KW - Total ionizing dose effect
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U2 - 10.1109/MEMS51782.2021.9375332
DO - 10.1109/MEMS51782.2021.9375332
M3 - Conference contribution
AN - SCOPUS:85103444490
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 1051
EP - 1054
BT - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Y2 - 25 January 2021 through 29 January 2021
ER -
