Memory design using a one-transistor gain cell on SOI

Engineering

• Measurement 50%
• Sensing System 50%
• Random Access 50%
• Reference Cell 50%
• Floating Body 50%
• Access Time 50%
• Parameter Variation 50%
• Efficiency 50%
• Simulation 50%
• Design 50%
• Temperature 50%
• Development 50%

Physics

• Memory 100%
• Temperature 50%
• Simulation 50%
• Technology 50%
• Arrays 50%