TY - GEN
T1 - Memory effect in simple Cu nanogap junction
AU - Suga, Hiroshi
AU - Horikawa, Masayo
AU - Miyazaki, Hisao
AU - Odaka, Shunsuke
AU - Tsukagoshi, Kazuhito
AU - Shimizu, Tetsuo
AU - Naitoh, Yasuhisa
PY - 2010/1/1
Y1 - 2010/1/1
N2 - We have investigated the resistance switching effect in Cu nanogap junction. Nanogap structures were created by means of electromigration and their electrical properties were measured in a high vacuum chamber. The measured current-voltage characteristics exhibited a clear negative resistance and memory effect with a large on-off ratio of over 105. The estimation from I-V curves indicates that the resistance switching was caused by the gap size change, which implies that the nanogap switching (NGS) effect also occurs in Cu electrodes, a popular wiring material in an integrated circuit.
AB - We have investigated the resistance switching effect in Cu nanogap junction. Nanogap structures were created by means of electromigration and their electrical properties were measured in a high vacuum chamber. The measured current-voltage characteristics exhibited a clear negative resistance and memory effect with a large on-off ratio of over 105. The estimation from I-V curves indicates that the resistance switching was caused by the gap size change, which implies that the nanogap switching (NGS) effect also occurs in Cu electrodes, a popular wiring material in an integrated circuit.
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U2 - 10.1557/proc-1250-g10-05
DO - 10.1557/proc-1250-g10-05
M3 - Conference contribution
AN - SCOPUS:78650386841
SN - 9781605112237
T3 - Materials Research Society Symposium Proceedings
SP - 221
EP - 226
BT - Materials and Physics for Nonvolatile Memories II
PB - Materials Research Society
ER -