Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide

Y. Hirayama; F. Koshiga; T. Sugano

doi:10.1016/0040-6090(83)90426-1

Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al₂O₃ gate oxide

Y. Hirayama, F. Koshiga, T. Sugano

Research output: Contribution to journal › Article › peer-review

Abstract

Mesa- and planar-type InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated on iron-doped semi-insulating substrates with plasma anodic Al₂O₃ as the gate oxide. The characteristics of the MISFETs were measured with a curve tracer and by a pulse method. The effective channel mobilities obtained from these measurements for mesa-type and planar-type devices are 800-2500 cm² V^-1s^-1 and 350-500 cm² V^-1s^-1 respectively. The drift of the current-voltage characteristics was measured and is discussed.

Original language	English
Pages (from-to)	71-76
Number of pages	6
Journal	Thin Solid Films
Volume	103
Issue number	1-3
DOIs	https://doi.org/10.1016/0040-6090(83)90426-1
Publication status	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90426-1

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title = "Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide",

abstract = "Mesa- and planar-type InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated on iron-doped semi-insulating substrates with plasma anodic Al2O3 as the gate oxide. The characteristics of the MISFETs were measured with a curve tracer and by a pulse method. The effective channel mobilities obtained from these measurements for mesa-type and planar-type devices are 800-2500 cm2 V-1s-1 and 350-500 cm2 V-1s-1 respectively. The drift of the current-voltage characteristics was measured and is discussed.",

author = "Y. Hirayama and F. Koshiga and T. Sugano",

year = "1983",

doi = "10.1016/0040-6090(83)90426-1",

language = "English",

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journal = "Thin Solid Films",

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AU - Hirayama, Y.

AU - Koshiga, F.

AU - Sugano, T.

PY - 1983

Y1 - 1983

N2 - Mesa- and planar-type InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated on iron-doped semi-insulating substrates with plasma anodic Al2O3 as the gate oxide. The characteristics of the MISFETs were measured with a curve tracer and by a pulse method. The effective channel mobilities obtained from these measurements for mesa-type and planar-type devices are 800-2500 cm2 V-1s-1 and 350-500 cm2 V-1s-1 respectively. The drift of the current-voltage characteristics was measured and is discussed.

AB - Mesa- and planar-type InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated on iron-doped semi-insulating substrates with plasma anodic Al2O3 as the gate oxide. The characteristics of the MISFETs were measured with a curve tracer and by a pulse method. The effective channel mobilities obtained from these measurements for mesa-type and planar-type devices are 800-2500 cm2 V-1s-1 and 350-500 cm2 V-1s-1 respectively. The drift of the current-voltage characteristics was measured and is discussed.

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ER -

Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al₂O₃ gate oxide

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