We have developed an apparatus for polarized cathodoluminescence (CL) spectroscopy combined with transmission electron microscopy (TEM), that enables us to obtain simultaneously structural data in higher spatial resolution by TEM and polarized luminescence spectra by CL of the same microscopic area. The polarized-CL/TEM method is very useful to study the optical properties of low-dimensional microstructures in semiconducting materials. We have applied the method to examine the optical property of antiphase boundaries in CuPt-ordered GaInP2 and found, for the first time, the polarized light emission from the APBs whose habit planes are parallel to the (T11) and (1T0) atomic planes.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 2000|
|Event||The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA|
Duration: 1999 Nov 29 → 1999 Nov 30