Metal inserted poly-si stacks with La2O3 gate dielectrics for scaled EOT and VFB control by oxygen incorporation

T. Kawanago; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3567625

Metal inserted poly-si stacks with La₂O₃ gate dielectrics for scaled EOT and V_FB control by oxygen incorporation

T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-Inserted Poly-Si (MIPS) stacks for gate oxide scaling have been presented with La₂O₃ gate dielectrics. An equivalent oxide thickness (EOT) of 0.69nm is achieved with good interfacial property by high temperature annealing. The flatband voltage (VFB) can be modulated by oxygen incorporation in conjunction with Si removal process with less than 1Å EOT degradation.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2011, CSTIC 2011
Pages	489-494
Number of pages	6
Edition	1
DOIs	https://doi.org/10.1149/1.3567625
Publication status	Published - 2011
Externally published	Yes
Event	10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China Duration: 2011 Mar 13 → 2011 Mar 14

Publication series

Name	ECS Transactions
Number	1
Volume	34
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	10th China Semiconductor Technology International Conference 2011, CSTIC 2011
Country/Territory	China
City	Shanghai
Period	11/3/13 → 11/3/14

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3567625

Cite this

Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Metal inserted poly-si stacks with La₂O₃ gate dielectrics for scaled EOT and V_FB control by oxygen incorporation. In China Semiconductor Technology International Conference 2011, CSTIC 2011 (1 ed., pp. 489-494). (ECS Transactions; Vol. 34, No. 1). https://doi.org/10.1149/1.3567625

Metal inserted poly-si stacks with La₂O₃ gate dielectrics for scaled EOT and V_FB control by oxygen incorporation. / Kawanago, T.; Kakushima, K.; Ahmet, P. et al.

China Semiconductor Technology International Conference 2011, CSTIC 2011. 1. ed. 2011. p. 489-494 (ECS Transactions; Vol. 34, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawanago, T, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Metal inserted poly-si stacks with La₂O₃ gate dielectrics for scaled EOT and V_FB control by oxygen incorporation. in China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 edn, ECS Transactions, no. 1, vol. 34, pp. 489-494, 10th China Semiconductor Technology International Conference 2011, CSTIC 2011, Shanghai, China, 11/3/13. https://doi.org/10.1149/1.3567625

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